Datasheet4U Logo Datasheet4U.com

2SC3910 - NPN Transistor

Datasheet Summary

Description

High Speed Switching High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta

📥 Download Datasheet

Datasheet preview – 2SC3910

Datasheet Details

Part number 2SC3910
Manufacturer INCHANGE
File Size 208.96 KB
Description NPN Transistor
Datasheet download datasheet 2SC3910 Datasheet
Additional preview pages of the 2SC3910 datasheet.

📁 Similar Datasheet

  • 2SC3912 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3913 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3914 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3915 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3916 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3917 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3918 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3919 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3900 - Epitaxial Planar Silicon Transistor (Sanyo)
  • 2SC3901 - PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Speed Switching ·High Collector-Base Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 150 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3910 isc website：www.iscsemi.
Published: |