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2SC3947 NPN Transistor

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Description

isc Silicon NPN Power Transistor 2SC3947 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number
2SC3947
Manufacturer
INCHANGE
File Size
211.18 KB
Datasheet
2SC3947-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 850 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak

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