* High speed (tf=100ns typ).
* High reliability (adoption of HVP process).
* High breakdown voltage (VCBO=1500V).
* Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3996] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec
2SC3996
Sanyo Semicon Device
90.51 KB
Silicon npn transistor.
Ordering number:EN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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