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2SC4806 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1700V(Min). High Switching Speed. Low Saturation Voltage. 100% avalanche tested. Minimum Lot-to-L.

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Datasheet Specifications

Part number
2SC4806
Manufacturer
Inchange Semiconductor
File Size
191.02 KB
Datasheet
2SC4806-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Horizontal deflection output for high resolution display.
* High speed switching power supply output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5

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