2SC4007 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC4007 .
Low Collector Saturation Voltage : VCE(sat)= 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Wide Area of.

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Datasheet Specifications

Part number: 2SC4007
Manufacturer: Inchange Semiconductor
File Size: 213.65 KB
Datasheet: 2SC4007_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-P

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2SC4007 Silicon NPN Power Transistor Inchange Semiconductor

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