* 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2
* High-speed switching
* High collector-base voltage (Emitter open) VCBO φ 3.1±0.1
* Wide safe operation area
* Satisfactory linearity of forward current transfer ratio hFE
* Full-pack package which can be instal
2SC4004
Panasonic Semiconductor
256.97 KB
Silicon npn transistor.
Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
For high breakdown voltage high-speed switching.
📁 Related Datasheet
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HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
2SC4001 - Silicon NPN Transistor
(NEC)
.
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isc Silicon NPN Power Transistor
DESCRIPTION ·The 2SC4001is designed for uses of high-resolution monitor
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2SC4002 - Silicon NPN Transistor
(Sanyo Semicon Device)
Ordering number:EN2960
NPN Triple Diffused Planar Silicon Transistor
2SC4002
High-Voltage Driver Applications
Features
· High breakdown voltage. · A.
2SC4002 - NPN Triple Diffused Planar Silicon Transistor
(ON Semiconductor)
2SC4002
Ordering number : ENN2960A
2SC4002
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
• High breakdow.
2SC4002 - NPN Silicon Triple Diffused Planar Transistor
(SEMTECH)
ST 2SC4002
NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications.
The transistor is subdivided into two groups, D and E, .
2SC4002 - NPN Silicon Triple Diffused Planar Transistor
(Bluecolour)
2SC4002 NPN Silicon Triple Diffused Planar Transistor
for High-Voltage Driver Applications.
The transistor is subdivided into two groups, D and E, acc.
2SC4003 - NPN Epitaxial Planar Silicon Transistor
(GME)
NPN Epitaxial Planar Silicon Transistor
FEATURES
High hFE hFE=60 to 200. Low VCE(sat)=0.6V.
Pb
Lead-free
Production specification
2SC4003
TO-2.
