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2SD1801 - Silicon NPN Power Transistor

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Description

Large current capacitance and wide ASO Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and r

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Datasheet Details

Part number 2SD1801
Manufacturer Inchange Semiconductor
File Size 228.67 KB
Description Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1801 DESCRIPTION ·Large current capacitance and wide ASO ·Small and slim package making it easy to make 2SD1801/2SB1201-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temper
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