2SD1841 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High Current Capability. Wide Area of Safe Operation. Complement to Type.

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Datasheet Specifications

Part number: 2SD1841
Manufacturer: Inchange Semiconductor
File Size: 217.33 KB
Datasheet: 2SD1841_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for motor drivers, relay drivers, converters and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Co

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2SD1841 Silicon NPN Power Transistor Inchange Semiconductor

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