Datasheet4U Logo Datasheet4U.com

2SD1841 - Silicon NPN Power Transistor

2SD1841 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High Current Capability. Wide Area of Safe Operation. Complement to Type.

2SD1841 Applications

* Designed for motor drivers, relay drivers, converters and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Co

📥 Download Datasheet

Preview of 2SD1841 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1841
Manufacturer
Inchange Semiconductor
File Size
217.33 KB
Datasheet
2SD1841_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 2SD1840 - PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1842 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD1843 - NPN Silicon Transistor (NEC)
  • 2SD1845 - Silicon NPN Transistor (Panasonic)
  • 2SD1846 - NPN Transistor (INCHANGE)
  • 2SD1847 - Silicon NPN Power Transistor (INCHANGE)
  • 2SD1848 - NPN Transistor (INCHANGE)
  • 2SD1849 - NPN Transistor (INCHANGE)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1841-like datasheet