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2SD1803 - TO-126 Silicon NPN Power Transistor

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Description

High Collector Current-IC= 5.0A Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A Good Linearity of hFE Complement to Type 2SB1203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,high-speed

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Part number 2SD1803
Manufacturer Inchange Semiconductor
File Size 211.96 KB
Description TO-126 Silicon NPN Power Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5.0A ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A ·Good Linearity of hFE ·Complement to Type 2SB1203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,high-speed inverters,converters, and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5.0 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8.0 A 1.
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