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2SD1846 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : VCBO= 1300V (Min. High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations fo.

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Datasheet Specifications

Part number
2SD1846
Manufacturer
INCHANGE
File Size
208.12 KB
Datasheet
2SD1846-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3.5 A ICM Collecto

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