2SD1847 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Base Breakdown Voltage- : VCBO= 1300V (Min. High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations fo.

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Datasheet Specifications

Part number: 2SD1847
Manufacturer: INCHANGE
File Size: 211.81 KB
Datasheet: 2SD1847-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector

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2SD1847 Silicon NPN Power Transistor INCHANGE

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