* High DC current gain due to Darlington connection
* High surge resistance due to on-chip protection elements: C to E: Dumper diode C to B: Zener diode
* Low collector saturation voltage ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to e
2SD1843
NEC
73.67 KB
Npn silicon transistor.
DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1843
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-S.
📁 Related Datasheet
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2SD1845
Unit: mm
s
q q
21.0± 0.5 15.0± 0.2 0.7
15.0± 0.3 11.0± 0.2
5.0± 0.2 3.2
q q q q
φ3.2± 0.1
16.2± 0.5 3.2 2.3
2.0± 0.2
2.0± 0.1 0.6± 0..
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