2SK1199
Inchange Semiconductor
200.39kb
N-channel mosfet transistor. *Drain Current *ID= 2A@ TC=25℃ *Drain Source Voltage- : VDSS= 900V(Min) *Fast Switching Speed *Minimum Lot-to-Lot variations for robu
📁 Related Datasheet
2SK1190 - MOSFET
(Sanken electric)
2SK1190
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 22 ± 88 (Tch 150ºC)
(Ta = 25ºC)
External dimensions.
2SK1191 - MOSFET
(Sanken electric)
2SK1191
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 30 ± 120 (Tch 150ºC)
(Ta = 25ºC)
External dimension.
2SK1192 - MOSFET
(Sanken electric)
2SK1192
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 ± 20 ± 40 ± 160 (Tch 150ºC)
(Ta = 25ºC)
External dimension.
2SK1194 - VR Series Power MOSFET
(Shindengen Electric Mfg.Co.Ltd)
SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
2SK1194
( F05E23 )
230V 0.5A
FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) i.
2SK1195 - VR Series Power MOSFET
(Shindengen Electric Mfg.Co.Ltd)
SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
2SK1195
( F1E23 )
230V 1.5A
FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) is.
2SK1198 - N-Channel MOSFET
(NEC)
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2SK1199 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
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2SK11 - Silicon N-Channel Transistor
(Toshiba)
SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS)
2SK11 2SK12 2SK15
LOW FREQUENCY AMPLIFIER, HIGH INPUT IMPEDANCE CIRCUIT, CHOPPER AMPLIFIER.
2SK1101-01MR - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
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2SK1102-01M - N-CHANNEL SILICON POWER MOS-FET
(ETC)
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