2SK2398 Datasheet, Transistor, Inchange Semiconductor

✔ 2SK2398 Application

PDF File Details

Manufacture Logo for Inchange Semiconductor
Inchange Semiconductor manufacturer logo

Part number:

2SK2398

Manufacturer:

Inchange Semiconductor

File Size:

221.90kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor. *Drain Current ID= 45A@ TC=25℃ *Drain Source Voltage- : VDSS= 60V(Min) *Fast Switching Speed *Minimum Lot-to-Lot variations for robus

Datasheet Preview: 2SK2398 📥 Download PDF (221.90kb)
Page 2 of 2SK2398

📁 Related Datasheet

2SK2390 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
.. 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance H.
2SK2391 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2391 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2391 Chopper Regulator, DC−DC Converter and Motor Drive Application.
2SK2393 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2393 Silicon N-Channel MOS FET Application High voltage / High speed power switching Features • • • • • Low on-resistance, High breakdown voltage.
2SK2393 - Silicon N-Channel MOSFET (Renesas Technology)
2SK2393 Silicon N Channel MOS FET Application High voltage / High speed power switching Features • Low on-resistance, High breakdown voltage • High sp.
2SK2394 - N-Channel Junction Silicon FET (Sanyo Semicon Device)
Ordering number:EN4839A N-Channel Junction Silicon FET 2SK2394 Low-Noise HF Amplifier Applications Applications · AM tuner RF amplifier. · Low-noise.
2SK2394 - N-Channel JFET (ON Semiconductor)
DATA SHEET .onsemi. N-Channel JFET 15 V, 10 to 20 mA, 38 mS, CP 2SK2394 Features • Large ⎪yfs⎪ • Small Ciss • Small−Sized Package Permitting 2.
2SK2395 - N-Channel Junction Silicon FET (Sanyo Semicon Device)
Ordering number:ENN4840 N-Channel Junction Silicon FET 2SK2395 Low-Noise HF Amplifier Applications Applications · AM tuner RF amplifier. · Low-noise.
2SK2396A - Silicon Power MOSFET (Renesas)
N MOS UHF TV MOS Silicon Power MOS Field Effect Transistor 2SK2396A UHF PO = 100 W, GL = 12 dB, h D = 50 TYP VDD = 30 V, f = 860 MHz, IDQ = 150 m.
2SK2397-01MR - N-channel MOS-FET (Fuji Electric)
2SK2397-01MR FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.

TAGS

2SK2398 N-Channel MOSFET Transistor Inchange Semiconductor