Part number:
2SK610
Manufacturer:
Inchange Semiconductor
File Size:
241.03 KB
Description:
N-channel mosfet transistor.
* Drain Current
* ID=3A@ TC=25℃
* Drain Source Voltage- : VDSS= 400V(Min)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
* High Voltage.
* High speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
2SK610
Inchange Semiconductor
241.03 KB
N-channel mosfet transistor.
📁 Related Datasheet
2SK61 - Silicon N-Channel Junction FET
(ETC)
Free Datasheet http://.datasheet-pdf./
Free Datasheet http://.datasheet-pdf./
Free Datasheet http://.datasheet-pdf./
Free Datashe.
2SK611 - MOS FIELD EFFECT POWER TRANSISTOR
(NEC)
.
2SK612 - MOS Field Effect Power Transistors
(NEC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK612 - MOS Field Effect Power Transistors
(ETC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK612-Z - MOS Field Effect Power Transistors
(NEC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK612-Z - MOS Field Effect Power Transistors
(ETC)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
.D w
t a
S a
e h
t e
U 4
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
2SK613 - Silicon N-Channel Junction FET
(Sony)
Powered by ICminer. Electronic-Library Service CopyRight 2003
Powered by ICminer. Electronic-Library Service CopyRight 2003
Powered by ICminer.
2SK614 - N-Channel MOSFET
(Panasonic Semiconductor)
Silicon MOS FETs (Small Signal)
2SK614
Silicon N-Channel MOS FET
For switching
unit: mm
5.0±0.2
5.1±0.2
4.0±0.2
s Features
q Low ON-resistance RDS(.
