3CA168 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device perfo.

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Datasheet Specifications

Part number: 3CA168
Manufacturer: Inchange Semiconductor
File Size: 212.10 KB
Datasheet: 3CA168-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Audio frequency power amplifier applications
* Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Volta

3CA168 Distributors

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3CA168 Silicon PNP Power Transistor Inchange Semiconductor

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