3CA1943
TY Semiconductor
182.83kb
To-3p plastic-encapsulate transistors.
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3CA1943 - SILICON PNP TRANSISTOR
(BLUE ROCKET ELECTRONICS)
2SA1943(3CA1943)
PNP /SILICON PNP TRANSISTOR
:。 Purpose: Power amplifier applications.
： 100W ， 2SC5200（3DA5200）。 Features: Remend for 100W high.
3CA1930 - SILICON PNP TRANSISTOR
(LZG)
2SA1930(3CA1930)
PNP /SILICON PNP TRANSISTOR
:。
Purpose: General power and driver stage amplifier applications.
：， 2SC5171(3DA5171)。
Features: Hig.
KLT1B15DC48 - SILICON PNP TRANSISTOR
(LZG)
2SB1184(3CA1184)
:。
PNP /SILICON PNP TRANSISTOR
Purpose: Power amplifier applications。
:, 2SD1760(3DA1760) 。
Features: Low VCE(sat),plements th.
3CA1185 - SILICON PNP TRANSISTOR
(LZG)
2SB1185(3CA1185)
PNP /SILICON PNP TRANSISTOR
:。/Purpose: Power amplifier applications. :VCE(sat)， 2SD1762(3DA1762)。
Features: Low VCE(sat),pleme.
3CA1370 - SILICON PNP TRANSISTOR
(LZG)
2SA1370(3CA1370)
PNP /SILICON PNP TRANSISTOR
:。/Purpose: Color TV chroma output and high
breakdown voltage driver.
:,,。/Features: High breakdown v.
3CA1371 - SILICON PNP TRANSISTOR
(LZG)
2SA1371(3CA1371)
PNP /SILICON PNP TRANSISTOR
:。
Purpose: Color TV chroma output and high breakdown voltage driver.
:,,。
Features: High breakdown v.
3CA1412 - SILICON PNP TRANSISTOR
(LZG)
2SB1412(3CA1412)
PNP /SILICON PNP TRANSISTOR
：。
Purpose: Medium power amplifier applications.
:,， 2SD2118(3DG2118)。
Features: Low VCE(sat),excell.
3CA168 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot .
3CA1837 - Transistors
(GME)
Plastic-Encapsulate Transistors
FEATURES
Complementary to 3DA4793 Collector Power Dissipation PCM : 2W (Tamb=25.)
20 W (Tcase=25.)
Pb
Lead-fre.
3CA1837 - PNP TRANSISTOR
(Jiangsu Changjiang Electronics)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F
3CA1837 TRANSISTOR (PNP)
Plastic-Encapsulate Transistors
TO-220F
FEATURES . High Transit.
