4N35 N-Channel MOSFET Transistor

Inchange Semiconductor

Description

isc N-Channel MOSFET Transistor .
Drain Current ID= 4A@ TC=25℃. Drain Source Voltage- : VDSS= 350V(Min). Fast Switching Speed. Minimum Lot-to-Lot variations for robust.

📥 Download Datasheet

4N35 Datasheet Preview — Preview of 4N35 PDF

Datasheet Specifications

Part number: 4N35
Manufacturer: Inchange Semiconductor
File Size: 226.14 KB
Datasheet: 4N35-InchangeSemiconductor.pdf
Description: N-Channel MOSFET Transistor

Applications

* General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 350 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4 A ID(puls) Pulse Drain Current 16 A Ptot Total Dissipation@TC=25℃ 75 W

4N35 Distributors

📁 Related Datasheet

4N35-X 4N35M 4N30 4N30M 4N30Z 4N31

📌 All Tags

4N35 N-Channel MOSFET Transistor Inchange Semiconductor

Inchange Semiconductor 4N35-like datasheet