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AP9997GH

N-Channel MOSFET Transistor

AP9997GH Features

* Drain Current : ID= 15A@ TC=25℃

* Drain Source Voltage : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive,

AP9997GH General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 40 A PD Tot.

AP9997GH Datasheet (286.20 KB)

Preview of AP9997GH PDF

Datasheet Details

Part number:

AP9997GH

Manufacturer:

Inchange Semiconductor

File Size:

286.20 KB

Description:

N-channel mosfet transistor.

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AP9997GH N-Channel MOSFET Transistor Inchange Semiconductor

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