AP9997GH - N-Channel MOSFET Transistor

Inchange Semiconductor

AP9997GH Datasheet Preview — Preview of AP9997GH PDF

Datasheet Details

Part number	AP9997GH
Manufacturer	Inchange Semiconductor
File Size	286.20 KB
Description	N-Channel MOSFET Transistor
Datasheet	AP9997GH-InchangeSemiconductor.pdf

AP9997GH Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 96 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Juncti

Features

Drain Current : ID= 15A@ TC=25℃.
Drain Source Voltage : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Sep 14, 2022 |