AP9997GM Datasheet - Advanced Power Electronics

AP9997GM, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9997GM RoHS-compliant Product Advanced Power Electronics Corp.▼ Fast Switching Characteristic ▼ Single Drive Requirement ▼ Surface Mount Package D.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance a.

AP9997GM_AdvancedPowerElectronics.pdf

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Datasheet Details

Part number:

AP9997GM

Manufacturer:

Advanced Power Electronics

File Size:

201.91 KB

Description:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulse

AP9997GM Distributors

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AP9997GM N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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