AP9997GH-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP9997GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristic Lowe.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Specifications

Part number: AP9997GH-HF-3
Manufacturer: Advanced Power Electronics
File Size: 87.17 KB
Datasheet: AP9997GH-HF-3-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* such as medium-power DC/DC converters. The through-hole TO-251 version (AP9997GJ-HF-3) is available where a small PCB footprint is required. G D S D (tab) TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source

AP9997GH-HF-3 Distributors

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AP9997GH-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP9997GH-HF-3-like datasheet