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BD245D Silicon NPN Power Transistor

BD245D Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain- : hFE>40@IC = 1A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A.

BD245D Applications

* Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base

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Datasheet Details

Part number
BD245D
Manufacturer
Inchange Semiconductor
File Size
217.30 KB
Datasheet
BD245D-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BD245D-like datasheet