BD245D Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain- : hFE>40@IC = 1A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1 V(Max)@ IC = 3A.

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Datasheet Specifications

Part number: BD245D
Manufacturer: Inchange Semiconductor
File Size: 217.30 KB
Datasheet: BD245D-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base

BD245D Distributors

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BD245D Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BD245D-like datasheet