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BD243C - Silicon NPN Power Transistor

Download the BD243C datasheet PDF. This datasheet also covers the BD243 variant, as both devices belong to the same silicon npn power transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD243-InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243;

60V(Min)- BD243A 80V(Min)- BD243B;

100V(Min)- BD243C ·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD243 55 BD243A 70 VCBO Collector-Base Voltage V BD243B 90 BD243C 110 BD243 45 VCEO Collector-Emitter Voltage BD243A 60 V BD243B 80 BD243C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website:www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 VCEO(SUS) Collector-Emitter Sustaining Voltage BD243A BD243B IC= 30mA ;IB=0 VCE(sat) VBE(on) BD243C Collector-Emitter Voltage Saturation IC= 6A;

Overview

isc Silicon NPN Power Transistor BD243/A/B/C.