BD330 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor BD330 .
DC Current Gain- : hFE= 85~375(Min)@ IC= -0. Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -20V(Min). Complement to type BD329.

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Datasheet Specifications

Part number: BD330
Manufacturer: Inchange Semiconductor
File Size: 210.60 KB
Datasheet: BD330_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -32 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A IBM Base Current-Peak PC

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BD330 Silicon PNP Power Transistor Inchange Semiconductor

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