BD369 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistors .
Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1. DC Current Gain- : hFE= 20(Min)@IC=-10A. Excellent Safe Operati.

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Datasheet Specifications

Part number: BD369
Manufacturer: Inchange Semiconductor
File Size: 207.31 KB
Datasheet: BD369-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A

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BD369 Silicon PNP Power Transistor Inchange Semiconductor

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