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BD369 Datasheet - Inchange Semiconductor

BD369 Silicon PNP Power Transistor

*Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1.0V(Max)@ IC=-10A *DC Current Gain- : hFE= 20(Min)@IC=-10A *Excellent Safe Operating Area *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general purpose power .

BD369 Datasheet (207.31 KB)

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Datasheet Details

Part number:

BD369

Manufacturer:

Inchange Semiconductor

File Size:

207.31 KB

Description:

Silicon pnp power transistor.

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BD369 Silicon PNP Power Transistor Inchange Semiconductor

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