Datasheet Details
| Part number | BD369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.31 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 BD369-InchangeSemiconductor.pdf
|
| Part number | BD369 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.31 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
BD369-InchangeSemiconductor.pdf
|
Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1.0V(Max)@ IC=-10A DC Current Gain- : hFE= 20(Min)@IC=-10A Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Ba
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