BD366 PNP Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD366 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Excellent Safe Operating Area. Complement to Type BD367. 100% avalanche te.

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Datasheet Specifications

Part number: BD366
Manufacturer: INCHANGE
File Size: 178.20 KB
Datasheet: BD366-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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BD366 PNP Transistor INCHANGE

INCHANGE BD366-like datasheet