BD364 PNP Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD364 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Excellent Safe Operating Area. Complement to Type BD365. 100% avalanche te.

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Datasheet Specifications

Part number: BD364
Manufacturer: INCHANGE
File Size: 178.41 KB
Datasheet: BD364-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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BD364 PNP Transistor INCHANGE

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