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BD364 PNP Transistor

BD364 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD364 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Excellent Safe Operating Area. Complement to Type BD365. 100% avalanche te.

BD364 Applications

* Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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Datasheet Details

Part number
BD364
Manufacturer
INCHANGE
File Size
178.41 KB
Datasheet
BD364-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD364-like datasheet