BD367 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors INCHANGE Semiconductor BD367 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Excellent Safe Operating Area. Complement to Type BD366. 100% avalanche t.

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Datasheet Specifications

Part number: BD367
Manufacturer: INCHANGE
File Size: 193.16 KB
Datasheet: BD367-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

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BD367 PNP Transistor INCHANGE

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