BD367
INCHANGE
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Pnp transistor.
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BD364 - PNP Transistor
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isc Silicon NPN Power Transistor
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BD364
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Excellent Safe.
BD365 - PNP Transistor
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isc Silicon PNP Power Transistors
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·Excellent Sa.
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isc Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Excellent Safe.
BD368 - PNP Transistor
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isc Silicon NPN Power Transistor
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BD368
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Excellent Safe.
BD369 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)=-1.0V(Max)@ IC=-10A ·DC Current Gain-
: hFE= 20(M.
BD3004HFP - Voltage Regulator
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TECHNICAL NOTE
Power Management LSI Series for Automotive Body Control
Regulators with Voltage Detector and Watchdog Timer
BD3004HFP,BD3005HFP
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BD3005HFP - Voltage Regulator
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TECHNICAL NOTE
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BD301 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BD301
DESCRIPTION ·DC Current Gain -
: hFE =30(Min.)@ IC= 3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(.
BD301N - 30 AMP BLOCK DIODES
(ShunYe)
BD301N THRU BD301P
30 AMP BLOCK DIODES
FEATURES
..High current capability ..High voltage available ..Glass passivated die construction ..High surge .
BD301P - 30 AMP BLOCK DIODES
(ShunYe)
BD301N THRU BD301P
30 AMP BLOCK DIODES
FEATURES
..High current capability ..High voltage available ..Glass passivated die construction ..High surge .