BD550 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
High Power Dissipation. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 110V(Min). Minimum Lot-to-Lot variations for robust device performa.

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Datasheet Specifications

Part number: BD550
Manufacturer: Inchange Semiconductor
File Size: 183.25 KB
Datasheet: BD550-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 130 V 130 V 110 V VEBO Emitter

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BD550 Silicon NPN Power Transistors Inchange Semiconductor

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