BD550B Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
High Power Dissipation. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min). Minimum Lot-to-Lot variations for robust device performa.

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Datasheet Specifications

Part number: BD550B
Manufacturer: Inchange Semiconductor
File Size: 182.55 KB
Datasheet: BD550B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for use as either driver or output unit applications in audio amplifier circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 275 V 275 V 250 V VEBO Emitter

BD550B Distributors

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BD550B Silicon NPN Power Transistors Inchange Semiconductor

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