BDT81 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors BDT81/83/85/87 .
DC Current Gain -hFE = 40(Min)@ IC= 5A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT8.

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Datasheet Specifications

Part number: BDT81
Manufacturer: Inchange Semiconductor
File Size: 214.75 KB
Datasheet: BDT81_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT81 60 BDT83 80 VCBO Collector-Base Voltage V BDT85 100 BDT87 120 BDT81 60 VCEO Collector-Emitter Voltage BDT83 80 V BDT

BDT81 Distributors

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BDT81 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BDT81-like datasheet