BDT81F Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors BDT81F/83F/85F/87F .
DC Current Gain -hFE = 40(Min)@ IC= 5A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BD.

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Datasheet Specifications

Part number: BDT81F
Manufacturer: Inchange Semiconductor
File Size: 215.40 KB
Datasheet: BDT81F_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT81F 60 BDT83F 80 VCBO Collector-Base Voltage BDT85F 100 BDT87F 120 BDT81F 60 VCEO Collector-Emitter Voltage BDT83F 80 BDT85F 1

BDT81F Distributors

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BDT81F Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BDT81F-like datasheet