BU323 Silicon Darlington NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon Darlington NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min. High Reliability. Minimum Lot-to-Lot variations for robust device performa.

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Datasheet Specifications

Part number: BU323
Manufacturer: Inchange Semiconductor
File Size: 209.36 KB
Datasheet: BU323_InchangeSemiconductor.pdf
Description: Silicon Darlington NPN Power Transistor

Applications

* Automotive ignition
* Switching regulator
* Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current- Continuous 10

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BU323 Silicon Darlington NPN Power Transistor Inchange Semiconductor

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