BU326A Datasheet, Transistor, ST Microelectronics

PDF File Details

Part number:

BU326A

Manufacturer:

STMicroelectronics ↗

File Size:

43.95kb

Download:

📄 Datasheet

Description:

High voltage npn silicon power transistor. The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply

BU326A Application

• Applications POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN tr

TAGS

BU326A

ST Microelectronics

📁 Related Datasheet

BU326 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A .. DESCRIPTION ·With TO-3 package ·High .

BU326 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BU326 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 375V(Min) ·Low Collector-Emitter Saturation .

BU326A - Silicon NPN Transistor (Toshiba)
: SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : V CBO=900V . High Peak Current Cap.

BU326A - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A .. DESCRIPTION ·With TO-3 package ·High .

BU326A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor BU326A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Low Colle.

BU326S - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Low Collector-Emitter Saturation Voltage.

BU326S - Bipolar NPN Device (Semelab)
BU326S Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .

BU32107EFV-M - Sound Processor (ROHM)
Datasheet Sound Processor for Car Audio BU32107EFV-M General Description The BU32107EFV-M is a Sound Processor for Car Audio Systems that includes D.

BU323 - Silicon Darlington NPN Power Transistor (Inchange Semiconductor)
isc Silicon Darlington NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·High Reliability ·Minimum Lot.

BU323A - 16 AMPERE PEAK POWER TRANSISTOR (Motorola Inc)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU323A/D NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington.