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BU705D Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min). High Switching Speed. Built-in Integrated Efficiency Diode. Minimum Lo.

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Datasheet Specifications

Part number
BU705D
Manufacturer
Inchange Semiconductor
File Size
219.36 KB
Datasheet
BU705D_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous

BU705D Distributors

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BU705D-like datasheet