BU705DF Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU705DF .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min). High Switching Speed. Built-in Integrated Efficiency Diode. Minimum Lo.

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Datasheet Specifications

Part number: BU705DF
Manufacturer: Inchange Semiconductor
File Size: 214.96 KB
Datasheet: BU705DF_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous

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BU705DF Silicon NPN Power Transistor Inchange Semiconductor

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