BU706DF Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BU706DF .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min). High Switching Speed. Built-in Integrated Diode. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: BU706DF
Manufacturer: Inchange Semiconductor
File Size: 214.18 KB
Datasheet: BU706DF_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Vol

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BU706DF Silicon NPN Power Transistor Inchange Semiconductor

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