BUK455-60B
Inchange Semiconductor
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N-channel mosfet transistor. *Drain Source Voltage- : VDSS=60V(Min) *Low RDS(ON) *Fast Switching Speed *Minimum Lot-to-Lot variations for robust device performanc
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BUK455-60A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK455-60A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations .
BUK455-60B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK455-60H - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK455-60H
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tran.
BUK455-100A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK455-100A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK455-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK455-100B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK455-200A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK455-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK455-200A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
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