BUK456-800B Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BUK456-800B

Manufacturer:

Inchange Semiconductor

File Size:

229.11kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

Drain Source Voltage- : VDSS=800V(Min)

Low RDS(ON)

Fast Switching Speed

Minimum Lot-to-Lot variat

BUK456-800B Application

• Applications
• Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applicati

TAGS

BUK456-800B

Inchange Semiconductor

📁 Related Datasheet

BUK456-800A - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-800A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.

BUK456-800B - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK456-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-1000B - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK456-1000B GENERAL DESCRIPTION N-channel enhancement mode field-effect power tr.

BUK456-100A - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-100A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.

BUK456-100B - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-100B - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.

BUK456-200A - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK456-200A - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.