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BUK456-200B PowerMOS transistor

BUK456-200B Description

Philips Semiconductors Product Specification PowerMOS transistor BUK456-200A/B GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK456-200B Applications

* QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK456 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -200A 200 19 150 175 0.16 MAX. -200B 200 17 150 175 0.2 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab ga

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