BUK456-100A
53.63kb
Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power
TAGS
📁 Related Datasheet
BUK456-1000B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-1000B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK456-100A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK456-100B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
BUK456-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK456-100B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK456-200A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK456-200A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK456-200B - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power t.
BUK456-200B - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations.
BUK456-60A - PowerMOS transistor
(NXP)
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power tr.
BUK456-60A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations .
Stock and price