BUL58B Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min. Collector Saturation Voltage : VCE(sat) = 0. High.

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Datasheet Specifications

Part number: BUL58B
Manufacturer: Inchange Semiconductor
File Size: 188.11 KB
Datasheet: BUL58B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-peak

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BUL58B Silicon NPN Power Transistor Inchange Semiconductor

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