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BUL58B Datasheet - Inchange Semiconductor

BUL58B Silicon NPN Power Transistor

*Collector *Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) *Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A *High Speed Switching APPLICATIONS *Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

BUL58B-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BUL58B

Manufacturer:

Inchange Semiconductor

File Size:

188.11 KB

Description:

Silicon npn power transistor.

BUL58B Distributor

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BUL58B BUL58B Silicon NPN Power Transistor Inchange Semiconductor