* 21.0 max 12.7 max 4.25 Dia. 4.15 1 2 3
* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characterist
BUL50A
Seme LAB
29.20 KB
Npn transistor.
LAB
MECHANICAL DATA Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (.
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