BUL50A Datasheet - Seme LAB

BUL50A NPN Transistor

LAB MECHANICAL DATA Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) SEME BUL50A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI REL VERSION.

BUL50A Features

* 21.0 max 12.7 max 4.25 Dia. 4.15 1 2 3

* Multi

* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

* Ion implant and high accuracy masking for tight control of characterist

BUL50A Datasheet (29.20 KB)