* TO220
* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Tri
BUL52B
Seme LAB
19.86 KB
Npn transistor.
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL52B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
📁 Related Datasheet
BUL52 - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL52B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
BUL52A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage
: VCE(sat) .
BUL52AFI - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2
SEME
BUL52AFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
3.6 D.
BUL52B - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BUL52B
..
DESCRIPTION ·With TO-220C package ·High vol.
BUL52BFI - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2
SEME
BUL52BFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
3.6 D.
BUL50A - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (.
BUL510 - NPN Transistor
(STMicroelectronics)
® BUL510
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY s LO.
BUL510 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package .. ·High voltage,high .
