BUL56B
INCHANGE
211.75kb
Npn transistor. *Collector*Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.) *Collector Saturation Voltage : VCE(sat) = 0.2V(Max) @ IC= 1A *High Sp
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MECHANICAL DATA Dimensions in mm
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ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
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(Seme LAB)
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MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
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