BUL56B NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BUL56B .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min. Collector Saturation Voltage : VCE(sat) = 0. High.

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Datasheet Specifications

Part number: BUL56B
Manufacturer: INCHANGE
File Size: 211.75 KB
Datasheet: BUL56B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 18 A ICM Collector Curren

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BUL56B NPN Transistor INCHANGE

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