* 2.54 2.54 ISOLATED TO220 Pin 1
* Base Pin 2
* Collectorn Pin3
* Emitter
* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and h
BUL52AFI
Seme LAB
63.63 KB
Npn transistor.
LAB
MECHANICAL DATA Dimensions in mm
10.2
SEME
BUL52AFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
3.6 D.
📁 Related Datasheet
BUL52A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage
: VCE(sat) .
BUL52 - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL52B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
BUL52B - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL52B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
BUL52B - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BUL52B
..
DESCRIPTION ·With TO-220C package ·High vol.
BUL52BFI - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2
SEME
BUL52BFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
3.6 D.
BUL50A - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (.
BUL510 - NPN Transistor
(STMicroelectronics)
® BUL510
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY s LO.
BUL510 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package .. ·High voltage,high .
