* 2.54 2.54 TO220 Pin 1
* Base Pin 2
* Collector Pin 3
* Emitter
* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accur
BUL53B
Seme LAB
19.59 KB
Npn transistor.
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL53B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
📁 Related Datasheet
BUL53A - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL53A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
BUL53BSMD - NPN Transistor
(Seme LAB)
BUL53BSMD
MECHANICAL DATA Dimensions in mm
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 ).
BUL50A - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (.
BUL510 - NPN Transistor
(STMicroelectronics)
® BUL510
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY s LO.
BUL510 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package .. ·High voltage,high .
BUL512HI - BUL512HI Circuit
(ETC)
.
BUL52 - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL52B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
BUL52A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage
: VCE(sat) .
