BUL53BSMD NPN Transistor

Seme LAB

Description

BUL53BSMD MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ).

📥 Download Datasheet

BUL53BSMD Datasheet Preview — Preview of BUL53BSMD PDF

Datasheet Specifications

Part number: BUL53BSMD
Manufacturer: Seme LAB
File Size: 20.58 KB
Datasheet: BUL53BSMD_SemeLAB.pdf
Description: NPN Transistor

Features

* Multi-Base design for efficient energy distribution across the chip.
* SIgnificantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple guard

Applications

* SEMEFAB DESIGNED AND DIFFUSED DIE
* HIGH VOLTAGE (VCBO = 800V)
* FAST SWITCHING (tf = 100ns)
* HIGH ENERGY RATING 0 .7 6 (0 .0 3 0 ) m in . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4

BUL53BSMD Distributors

📁 Related Datasheet

BUL510 BUL512HI BUL52A BUL52B BUL54A-TO5 BUL5555

📌 All Tags

BUL53BSMD NPN Transistor Seme LAB

Seme LAB BUL53BSMD-like datasheet