* Multi-Base design for efficient energy distribution across the chip.
* SIgnificantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple guard
BUL53BSMD Datasheet (20.58 KB)
BUL53BSMD
Seme LAB
20.58 KB
Npn transistor.
BUL53BSMD
MECHANICAL DATA Dimensions in mm
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 ).
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