BUL53BSMD Datasheet (Seme LAB)

BUL53BSMD, NPN Transistor

BUL53BSMD MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M a x .

0 .8 9 (0 .0 3 5 ) m in .

3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE RANGE SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATI

BUL53BSMD Features

* Multi-Base design for efficient energy distribution across the chip.

* SIgnificantly improved switching and energy ratings across full temperature range.

* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

* Triple guard