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BUL53BSMD NPN Transistor

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Description

BUL53BSMD MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ).

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Datasheet Specifications

Part number
BUL53BSMD
Manufacturer
Seme LAB
File Size
20.58 KB
Datasheet
BUL53BSMD_SemeLAB.pdf
Description
NPN Transistor

Features

* Multi-Base design for efficient energy distribution across the chip.
* SIgnificantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple guard

Applications

* SEMEFAB DESIGNED AND DIFFUSED DIE
* HIGH VOLTAGE (VCBO = 800V)
* FAST SWITCHING (tf = 100ns)
* HIGH ENERGY RATING 0 .7 6 (0 .0 3 0 ) m in . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4

BUL53BSMD Distributors

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📌 All Tags

NPN Transistor Seme LAB
Seme LAB BUL53BSMD-like datasheet