BUL57FP
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Npn transistor. The devices are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capabi
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BUL57 - NPN Transistor
(STMicroelectronics)
®
BUL57 BUL57FP
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
s
s s s s
s s s s
STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTORS HIGH .
BUL57 - Silicon NPN Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL57
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS.
BUL57A - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL57A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
BUL50A - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (.
BUL510 - NPN Transistor
(STMicroelectronics)
® BUL510
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY s LO.
BUL510 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220C package .. ·High voltage,high .
BUL512HI - BUL512HI Circuit
(ETC)
.
BUL52 - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL52B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.
BUL52A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage
: VCE(sat) .
BUL52AFI - NPN Transistor
(Seme LAB)
LAB
MECHANICAL DATA Dimensions in mm
10.2
SEME
BUL52AFI
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
3.6 D.
