BUL58D Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification BUL58D .
High Voltage Capability. High Speed Switching. Integrated Antiparallel Collector-Emitter Diode APPLICATIONS. Electronic ballasts for.

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Datasheet Specifications

Part number: BUL58D
Manufacturer: Inchange Semiconductor
File Size: 191.47 KB
Datasheet: BUL58D-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Electronic ballasts for fluorescent lighting
* Electronic transformers for halogen lamps
* Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage 800 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage

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BUL58D Silicon NPN Power Transistor Inchange Semiconductor

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